A new passivation method for porous silicon

被引：16

作者：

Fan, YM ^{[1
]}

Ju, JH ^{[1
]}

Zhang, WL ^{[1
]}

Xia, YB ^{[1
]}

Wang, ZM ^{[1
]}

Fang, ZJ ^{[1
]}

Wang, LJ ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 120卷 / 11期

关键词：

porous silicon; passivation; diamond-like film;

D O I：

10.1016/S0038-1098(01)00423-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we show the enhancement and stabilization of the luminescence when depositing diamond-like carbon (DLC) thin films on top of porous silicon (PS) layers. DLC thin films reduce the influence of different ambients to PS, which can cause the desorption of hydrogen molecules from the Si-H-x bonds leaving dangling bonds which operate as non-radiative recombination traps. So DLC thin films can lead to a more stable luminescence from PS layers. At the same time, hydrogenated carbon nitride films can further enhance the photoluminescence efficiency of PS because more dangling bonds are passivated by nitridation. (C) 2001 Published by Elsevier Science Ltd.

引用

页码：435 / 437

页数：3

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