Effects of O, H and N passivation on photoluminescence from porous silicon

被引：26

作者：

Xiong, ZH ^{[1
]}

Liao, LS ^{[1
]}

Yuan, S ^{[1
]}

Yang, ZR ^{[1
]}

Ding, XM ^{[1
]}

Hou, XY ^{[1
]}

机构：

[1] Fudan Univ, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

THIN SOLID FILMS | 2001年 / 388卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

porous silicon; luminescence; infrared spectroscopy; Auger electron spectroscopy;

D O I：

10.1016/S0040-6090(00)01887-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple but effective passivation method for porous silicon (PS) has been developed. Immersion of as-etched PS in dilute (NH4)(2)S/C2H5OH solution followed by ultraviolet light irradiation in air can lead to an enhancement of photoluminescence (PL) up to more than 20 times. Infrared absorption and Auger electron spectroscopic measurements show that the formation of SiH(O-3), Si-O-Si and Si-N bonds are formed during the post-treatment process. However, the PL intensity cannot be enhanced if the solution-treated sample is exposed to the laser beam in vacuum. It is thus concluded, that the PL enhancement can be attributed to the presence of compact passivation films consisting of the oxides and the nitride on both external and internal surfaces of the sponge-like PS samples. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：271 / 276

页数：6

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