Passivation of porous silicon by wet thermal oxidation

被引：39

作者：

Chen, HJ

Hou, XY

Li, GB

Zhang, FL

Yu, MR

Wang, X

机构：

[1] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

[2] SICHUAN INST TECHNOL,PHYS LAB,CHENGDU 611744,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 06期

关键词：

D O I：

10.1063/1.361226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A wet thermal oxidation method is proposed to passivate the electrochemically etched porous silicon. Bright and stable photoluminescence is achieved by wet oxidation at relatively low temperatures of 400-500 degrees C. The Fourier transform infrared absorption shows that the formation of SiH(O-3), SiH(SiO2), SiH2(O-2) bonds may be responsible to the stabilization of luminescence under the laser illumination. (C) 1996 American Institute of Physics.

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页码：3282 / 3285

页数：4

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