Identification and quantification of defects in highly Si-doped GaAs by positron annihilation and scanning tunneling microscopy

被引：72

作者：

Gebauer, J ^{[1
]}

KrauseRehberg, R ^{[1
]}

Domke, C ^{[1
]}

Ebert, P ^{[1
]}

Urban, K ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST FESTKORPERFORSCH, D-52425 JULICH, GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.78.3334

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Defects in highly Si-doped GaAs were identified and their concentration determined by combining positron lifetime spectroscopy with scanning tunneling microscopy. We observed with increasing Si-doping concentration an increasing concentration of a deep positron trap identified as Si-Ga-donor-Ga-vacancy complex. The concentration of shallow positron traps increased with the Si concentration too. The shallow traps are found to be Si-As acceptors and Si clusters.

引用

页码：3334 / 3337

页数：4

共 26 条

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