OBSERVATION OF BULK DEFECTS BY SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY - ARSENIC ANTISITE DEFECTS IN GAAS

被引：178

作者：

FEENSTRA, RM

WOODALL, JM

PETTIT, GD

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.71.1176

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The scanning tunneling microscope is used to study arsenic-related point defects in low-temperature-grown GaAs. Tunneling spectroscopy reveals a band of donor states located near E(v)+0.5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 angstrom from the core. The structure of the defect is found to be consistent with that of an isolated arsenic antisite defect (As on a Ga site) in a tetrahedral environment.

引用

页码：1176 / 1179

页数：4

共 9 条

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