共 59 条
- [3] BACHELET GB, 1985, 17TH P INT C PHYS SE, P755
- [4] Baj M., 1989, Materials Science Forum, V38-41, P101, DOI 10.4028/www.scientific.net/MSF.38-41.101
- [5] MODELING THE ELECTRONIC-STRUCTURE OF EL2 [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 817 - 831
- [6] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164
- [8] BARAFF GA, 1988, MATER RES SOC S P, V104, P375
- [9] BERGMAN K, 1988, 5TH P C SEM 3 5 MAT, P397
- [10] BOURGOIN JC, 1988, J APPL PHYS, V64, pR64