ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS AND THE PROPERTIES OF EL2

被引:166
作者
DABROWSKI, J
SCHEFFLER, M
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 15期
关键词
D O I
10.1103/PhysRevB.40.10391
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:10391 / 10401
页数:11
相关论文
共 59 条
  • [1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU
    BACHELET, GB
    HAMANN, DR
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4199 - 4228
  • [2] ASGA ANTISITE DEFECT IN GAAS
    BACHELET, GB
    SCHLUTER, M
    BARAFF, GA
    [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547
  • [3] BACHELET GB, 1985, 17TH P INT C PHYS SE, P755
  • [4] Baj M., 1989, Materials Science Forum, V38-41, P101, DOI 10.4028/www.scientific.net/MSF.38-41.101
  • [5] MODELING THE ELECTRONIC-STRUCTURE OF EL2
    BARAFF, GA
    LANNOO, M
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 817 - 831
  • [6] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC
    BARAFF, GA
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164
  • [7] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2
    BARAFF, GA
    SCHLUTER, M
    [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343
  • [8] BARAFF GA, 1988, MATER RES SOC S P, V104, P375
  • [9] BERGMAN K, 1988, 5TH P C SEM 3 5 MAT, P397
  • [10] BOURGOIN JC, 1988, J APPL PHYS, V64, pR64