MODELING THE ELECTRONIC-STRUCTURE OF EL2

[1] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (12) : 766 - 769

[2] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[3] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[4] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164

[5] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[7] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[8] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[9] BOURGOIN J, 1983, SPRINGER SERIES SOLI, V2, P35

[10] A CRITICAL-LOOK AT EL2 MODELS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 863 - 869

[1] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (12) : 766 - 769

[2] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[3] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[4] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164

[5] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[7] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[8] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[9] BOURGOIN J, 1983, SPRINGER SERIES SOLI, V2, P35

[10] A CRITICAL-LOOK AT EL2 MODELS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 863 - 869