ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC

被引：53

作者：

BARAFF, GA

SCHLUTER, M

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6154 / 6164

页数：11

共 34 条

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