DOUBLE ANION ANTISITE IN GAAS - THE SIMPLEST MEMBER OF EL2 FAMILY

被引：21

作者：

FIGIELSKI, T

KACZMAREK, E

WOSINSKI, T

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 38卷 / 04期

关键词：

D O I：

10.1007/BF00616060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：253 / 261

页数：9

共 29 条

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[6] PROPERTIES AND NATURE OF THE MAIN ELECTRON TRAP IN GAAS [J].

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[7]

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[9] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J].

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PHYSICAL REVIEW LETTERS, 1984, 53 (12) :1187-1190

[10] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

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GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

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