MECHANISM FOR THE CREATION OF ANTISITE DEFECTS, DURING COMBINED CLIMB-GLIDE MOTION OF DISLOCATIONS IN SPHALERITE-STRUCTURE CRYSTALS

被引：33

作者：

FIGIELSKI, T

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 36卷 / 04期

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D O I：

10.1007/BF00616556

中图分类号：

T [工业技术];

学科分类号：

08 ;

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页码：217 / 219

页数：3

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共 19 条

[1] DISLOCATION DENSITY AND SHEET RESISTANCE VARIATIONS ACROSS SEMI-INSULATING GAAS WAFERS
BLUNT, RT
CLARK, S
STIRLAND, DJ
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 943 - 949
[2] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS
BROZEL, MR
GRANT, I
WARE, RM
STIRLAND, DJ
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 610 - 612
[3] CONSTRICTED SEGMENTS ON FAULTED DIPOLES IN GERMANIUM
CHIANG, SW
CARTER, CB
KOHLSTEDT, DL
[J]. SCRIPTA METALLURGICA, 1980, 14 (07): : 803 - 807
[4] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
ELLIOTT, K
CHEN, RT
GREENBAUM, SG
WAGNER, RJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 907 - 909
[5] CREATION OF ASGA DEFECTS BY PLASTIC-DEFORMATION OF GAAS CRYSTALS
FIGIELSKI, T
WOSINSKI, T
MORAWSKI, A
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 353 - 357
[6] FORMATION OF ANTISITE DEFECTS BY GLIDING DISLOCATIONS IN SPHALERITE-STRUCTURE CRYSTALS
FIGIELSKI, T
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (04): : 199 - 200
[7] PROPERTIES AND NATURE OF THE MAIN ELECTRON TRAP IN GAAS
FIGIELSKI, T
WOSINSKI, T
[J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1984, 34 (05) : 403 - 408
[8] Hirth J.P., 1967, THEORY DISLOCATIONS
[9] EL2 DISTRIBUTIONS IN DOPED AND UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
CHEN, RT
YANG, J
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 419 - 421
[10] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
LAGOWSKI, J
GATOS, HC
PARSEY, JM
WADA, K
KAMINSKA, M
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344