ON THE MECHANISM OF FORMATION ON AS-GAT ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED N-TYPE GAAS

被引：12

作者：

BEALL, RB

MURRAY, R

NEWMAN, RC

WHITEHOUSE, JE

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 25期

关键词：

D O I：

10.1088/0022-3719/18/25/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L763 / L767

页数：5

共 16 条

[1] THE GENERATION BY ELECTRON-IRRADIATION OF ARSENIC ANTI-SITE DEFECTS IN N-TYPE GAAS
BEALL, RB
NEWMAN, RC
WHITEHOUSE, JE
WOODHEAD, J
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (15): : 2653 - 2659
[2] THE OBSERVATION OF ANTISITE DEFECTS IN N-TYPE AND UNDOPED GAAS FOLLOWING ELECTRON-IRRADIATION AND ANNEALING
BEALL, RB
NEWMAN, RC
WHITEHOUSE, JE
WOODHEAD, J
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (17): : 3273 - 3283
[3] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
CLEGG, JB
NEWMAN, RC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
[4] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES
GOSWAMI, NK
NEWMAN, RC
WHITEHOUSE, JE
[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477
[5] KENNEDY TA, 1981, B AM PHYS SOC, V26, P255
[6] DETECTION OF STRAIN IN NEUTRON-IRRADIATED GALLIUM-ARSENIDE FROM LOCAL MODE ABSORPTION-MEASUREMENTS
LAITHWAITE, K
NEWMAN, RC
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (06): : 1689 - 1695
[7] MEYER BK, 1985, J ELECTRON MATER A, V14, P921
[8] NEWMAN RC, 1985, J ELECTRON MATER A, V14, P87
[9] SPAETH JM, 1985, 1985 MRS C S B SAN F
[10] VANVECHTEN JA, 1980, HDB SEMICONDUCTORS, V3, P1