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- [4] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 610 - 612BROZEL, MRGRANT, IWARE, RMSTIRLAND, DJ
- [5] LOW-SYMMETRY INTERSTITIAL BORON CENTER IN IRRADIATED GALLIUM-ARSENIDE[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (15): : 3135 - 3146BROZEL, MRNEWMAN, RC
- [6] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 907 - 909ELLIOTT, KCHEN, RTGREENBAUM, SGWAGNER, RJ
- [7] GERE EA, 1963, PARAMAGNETIC RESONAN, V2, P725
- [8] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477GOSWAMI, NKNEWMAN, RCWHITEHOUSE, JE
- [9] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 46 - 48HOLMES, DECHEN, RTELLIOTT, KRKIRKPATRICK, CG
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