THE PRODUCTION AND STRUCTURE OF THE P-P3 ANTI-SITE DEFECT IN ELECTRON-IRRADIATED N-TYPE GAP

被引：12

作者：

BEALL, RB

NEWMAN, RC

WHITEHOUSE, JE

WOODHEAD, J

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 36期

关键词：

D O I：

10.1088/0022-3719/17/36/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L963 / L968

页数：6

共 23 条

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[4] THE PROPERTIES OF GALLIUM-ARSENIDE DOUBLY DOPED WITH SILICON AND GERMANIUM OR SILICON AND TIN
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[7] ELECTRON-PARAMAGNETIC RESONANCE OF ELECTRON-IRRADIATED GAP
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