THE PROPERTIES OF GALLIUM-ARSENIDE DOUBLY DOPED WITH SILICON AND GERMANIUM OR SILICON AND TIN

被引：15

作者：

BROZEL, MR ^{[1
]}

LAITHWAITE, K ^{[1
]}

NEWMAN, RC ^{[1
]}

OZBAY, B ^{[1
]}

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKSHIRE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 03期

关键词：

D O I：

10.1016/0022-0248(80)90005-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：619 / 624

页数：6

相关论文

共 9 条

[1] SILICON DONOR-ACCEPTOR PAIR DEFECTS IN GALLIUM-ARSENIDE
BROZEL, MR
NEWMAN, RC
OZBAY, B
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (20): : L785 - L788
[2] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
CLEGG, JB
NEWMAN, RC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
[3] GROWTH OF GAAS INGOTS WITH HIGH FREE-ELECTRON CONCENTRATIONS
GREENE, PD
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 612 - 618
[4] DETERMINATION OF FERMI-LEVEL EFFECT ON SI-SITE DISTRIBUTION IN GAAS-SI
KUNG, JK
SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) : 2254 - 2257
[5] STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE
LAITHWAITE, K
NEWMAN, RC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (24): : 4503 - 4510
[6] LAITHWAITE K, 1977, 33 I PHYS C P, P133
[7] INFRARED-ABSORPTION OF MIXED SILICON ISOTOPE PAIRS IN GALLIUM-ARSENIDE
LEUNG, PC
FREDRICK.J
SPITZER, WG
KAHAN, A
BOUTHILL.L
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1009 - 1012
[8] BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE
MORRISON, SR
NEWMAN, RC
THOMPSON, F
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : 633 - 644
[9] SPITZER WG, 1971, ADV SOLID STATE PHYS, V1, P44