ARSENIC ANTISITE DEFECT ASGA AND EL2 IN GAAS

被引：126

作者：

MEYER, BK

HOFMANN, DM

NIKLAS, JR

SPAETH, JM

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.36.1332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1332 / 1335

页数：4

共 21 条

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[5]

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[7]

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[8] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

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[9] OPTICAL-PROPERTIES OF AS-ANTISITE AND EL2 DEFECTS IN GAAS [J].

MEYER, BK ;

SPAETH, JM ;

SCHEFFLER, M .

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[10] ASGA ANTISITES AND THEIR RELATION TO EL2 DEFECTS IN GAAS [J].

MEYER, BK ;

SPAETH, JM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (04) :L99-L103

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