ASGA ANTISITES AND THEIR RELATION TO EL2 DEFECTS IN GAAS

[1] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1109 - 1118

[2] DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL627, DOI 10.1088/0022-3719/17/23/007

[3] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (12) : 1187 - 1190

[4] ELECTRON SPIN-LATTICE RELAXATION IN PHOSPHORUS-DOPED SILICON [J]. PHYSICAL REVIEW, 1960, 117 (01): : 69 - 83

[5] THE ROLE OF DEEP-LEVEL CENTERS AND COMPENSATION IN PRODUCING SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 204 - 207

[6] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[7] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 336 - 338

[8] LAGOWSKI J, 1984, UNPUB 3RD P C SEM IN

[9] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748

[10] COMPENSATION MECHANISMS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2840 - 2852

[1] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1109 - 1118

[2] DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL627, DOI 10.1088/0022-3719/17/23/007

[3] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (12) : 1187 - 1190

[4] ELECTRON SPIN-LATTICE RELAXATION IN PHOSPHORUS-DOPED SILICON [J]. PHYSICAL REVIEW, 1960, 117 (01): : 69 - 83

[5] THE ROLE OF DEEP-LEVEL CENTERS AND COMPENSATION IN PRODUCING SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 204 - 207

[6] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[7] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 336 - 338

[8] LAGOWSKI J, 1984, UNPUB 3RD P C SEM IN

[9] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748

[10] COMPENSATION MECHANISMS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2840 - 2852