IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT

被引:167
作者
KAMINSKA, M
SKOWRONSKI, M
KUSZKO, W
机构
关键词
D O I
10.1103/PhysRevLett.55.2204
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2204 / 2207
页数:4
相关论文
共 17 条
  • [1] ASGA ANTISITE DEFECT IN GAAS
    BACHELET, GB
    SCHLUTER, M
    BARAFF, GA
    [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547
  • [2] BAEUMLER M, UNPUB APPL PHYS LETT
  • [3] Baranowski J. M., 1985, Thirteenth International Conference on Defects in Semiconductors, P199
  • [4] ENGLMAN R, 1972, JAHNTELLER EFFECT MO, P70
  • [5] HAM FS, 1965, PHYS REV, V138, P1727
  • [6] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS
    HOFMANN, DM
    MEYER, BK
    LOHSE, F
    SPAETH, JM
    [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (12) : 1187 - 1190
  • [7] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS
    KAMINSKA, M
    SKOWRONSKI, M
    LAGOWSKI, J
    PARSEY, JM
    GATOS, HC
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304
  • [8] Lagowski J., 1985, Thirteenth International Conference on Defects in Semiconductors, P73
  • [9] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS
    LAGOWSKI, J
    LIN, DG
    AOYAMA, T
    GATOS, HC
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 336 - 338
  • [10] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
    LAGOWSKI, J
    GATOS, HC
    PARSEY, JM
    WADA, K
    KAMINSKA, M
    WALUKIEWICZ, W
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344