IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT

[1] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[2] BAEUMLER M, UNPUB APPL PHYS LETT

[3] Baranowski J. M., 1985, Thirteenth International Conference on Defects in Semiconductors, P199

[4] ENGLMAN R, 1972, JAHNTELLER EFFECT MO, P70

[5] HAM FS, 1965, PHYS REV, V138, P1727

[6] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (12) : 1187 - 1190

[7] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[8] Lagowski J., 1985, Thirteenth International Conference on Defects in Semiconductors, P73

[9] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 336 - 338

[10] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344

[1] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[2] BAEUMLER M, UNPUB APPL PHYS LETT

[3] Baranowski J. M., 1985, Thirteenth International Conference on Defects in Semiconductors, P199

[4] ENGLMAN R, 1972, JAHNTELLER EFFECT MO, P70

[5] HAM FS, 1965, PHYS REV, V138, P1727

[6] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (12) : 1187 - 1190

[7] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[8] Lagowski J., 1985, Thirteenth International Conference on Defects in Semiconductors, P73

[9] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 336 - 338

[10] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344