TUNNELING SPECTROSCOPY ACROSS GAAS/ALXGA1-XAS INTERFACES AT NANOMETER RESOLUTION

被引：50

作者：

SALEMINK, HWM ^{[1
]}

ALBREKTSEN, O ^{[1
]}

KOENRAAD, P ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.45.6946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The transition region at the interface of GaAs/AlxGa1-xAs multilayers grown by molecular-beam epitaxy is investigated on the (110) face using scanning tunneling microscopy and spectroscopy. An interface region of 2 to 3 unit cells is observed in the charge-density contours. The tunneling spectroscopy data, on the other hand, yield a transition region of 6 to 9 unit cells wide, as determined from the offset of the valence-band edge. The experimentally derived valence-band position compares well with theoretical calculations, provided the tip-induced electrostatic band bending in the semiconductor layers is taken into account.

引用

页码：6946 / 6949

页数：4

共 13 条

[1] ABRAM RA, 1988, NATO ADV STUDY I B, V189
[2] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES
ALBREKTSEN, O
ARENT, DJ
MEIER, HP
SALEMINK, HWM
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (01) : 31 - 33
[3] ALBREKTSEN O, 1991, J VAC SCI TECHNOL B, V9, P779
[4] BAND OFFSETS IN LATTICE-MATCHED HETEROJUNCTIONS - A MODEL AND 1ST-PRINCIPLES CALCULATIONS FOR GAAS/ALAS
BALDERESCHI, A
BARONI, S
RESTA, R
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (06) : 734 - 737
[5] BATRA IP, 1991, NATO ADV SCI I B-PHY, V253, P557
[6] SURFACE DOPING AND STABILIZATION OF SI(111) WITH BORON
BEDROSSIAN, P
MEADE, RD
MORTENSEN, K
CHEN, DM
GOLOVCHENKO, JA
VANDERBILT, D
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (12) : 1257 - 1260
[7] ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS
CHELIKOWSKY, JR
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (03) : 267 - 271
[8] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
FEENSTRA, RM
STROSCIO, JA
TERSOFF, J
FEIN, AP
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1192 - 1195
[9] TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE
FEENSTRA, RM
STROSCIO, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 923 - 929
[10] SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE
HAMERS, RJ
TROMP, RM
DEMUTH, JE
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (18) : 1972 - 1975

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