SCANNING TUNNELING MICROSCOPY OF CRYSTAL DISLOCATIONS IN GALLIUM-ARSENIDE

被引：41

作者：

COX, G ^{[1
]}

SZYNKA, D ^{[1
]}

POPPE, U ^{[1
]}

GRAF, KH ^{[1
]}

URBAN, K ^{[1
]}

KISIELOWSKIKEMMERICH, C ^{[1
]}

KRUGER, J ^{[1
]}

ALEXANDER, H ^{[1
]}

机构：

[1] UNIV COLOGNE,INST PHYS 2,W-5000 COLOGNE 41,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.64.2402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dislocations in GaAs induced by plastic deformation have been studied by scanning tunneling microscopy. Atomically resolved images of perfect and partial dislocations penetrating the cleaved {110} surface were obtained. A Burgers-vector analysis of the observed dislocations was performed. During observation the dislocations were found to be mobile over nm distances. No band bending was observed around the dislocation cores indicating that they are essentially electrically neutral. © 1990 The American Physical Society.

引用

页码：2402 / 2405

页数：4

共 19 条

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