CROSS-SECTIONAL IMAGING AND SPECTROSCOPY OF GAAS DOPING SUPERLATTICES BY SCANNING TUNNELING MICROSCOPY

被引:95
作者
FEENSTRA, RM
YU, ET
WOODALL, JM
KIRCHNER, PD
LIN, CL
PETTIT, GD
机构
[1] IBM Research Division, T. J. Watson Research Laboratory, Yorktown Heights, NY 10598
关键词
D O I
10.1063/1.107804
中图分类号
O59 [应用物理学];
学科分类号
摘要
The scanning tunneling microscope is used to image GaAs pn-doping superlattices, cleaved in ultrahigh vacuum. Current-voltage (I-V) measurements provide a detailed view of the variation in Fermi-level position across the superlattice. The I-V curves show the clear signature of nondepleted n- and p-type material, with depleted regions appearing at the interfaces between n- and p-type layers. The number of states available for tunneling is found to provide the major source of contrast in the images.
引用
收藏
页码:795 / 797
页数:3
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