Contact area lithography (CAL): A new approach to direct formation of nanometric chemical patterns

被引:40
作者
Bae, C
Shin, HJ [1 ]
Moon, J
Sung, MM
机构
[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea
[2] Yonsei Univ, Sch Adv Mat Engn, Seoul 120749, South Korea
[3] Kookmin Univ, Dept Chem, Seoul 136702, South Korea
关键词
D O I
10.1021/cm052084m
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A method, namely contact area lithography (CAL), that directly generates periodic surface chemical patterns (PSCP) at the sub- 100 nm scale is presented. The fabrication of isolated TiO2 nanodisc arrays and the fabrication of SIO2 nanocavity arrays using PSCPs on octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) is also demonstrated. The CAL provides excellent isolation of various inorganics resulting in nanostructure and directly generates the chemical patterns without any additional surface modification. The technique is also helpful in generating smaller size of patterns than those created by nanosphere lithography (NSL).
引用
收藏
页码:1085 / 1088
页数:4
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