Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

The structure, morphology, and optical properties of homoepitaxial GaN layers grown by molecular beam epitaxy on metalorganic chemical vapor deposition (MOCVD)-grown GaN ''template'' layers were investigated as a function of the group III/group V flux ratio during growth. GaN layers grown with a low III/V ratio (N-stable growth) displayed a faceted surface morphology and a tilted columnar structure with a high density of stacking faults. In contrast, films grown with a high III/V ratio (Ga-stable growth) displayed comparable structure to the underlying MOCVD-grown template. The transition from N-stable to Ga-stable growth modes was found to occur over a narrow range of Ga fluxes at a growth temperature of 650 degrees C. Evidence of Ga accumulation and step-flow growth was observed for films grown under Ga-stable conditions, leading to the formation of spiral growth features at the surface termination of mixed edge/screw dislocations. Photoluminescence measurements indicate that the deep-level (similar to 550nm) emission is increased relative to the near-band edge emission for films grown under N-stable conditions. (C) 1997 American Institute of Physics.