MBE growth and properties of GaN and AlxGa1-xN on GaN/SiC substrates

被引：12

作者：

Johnson, MAL ^{[1
]}

Fujita, S ^{[1
]}

Rowland, WH ^{[1
]}

Hughes, WC ^{[1
]}

He, YW ^{[1
]}

ElMasry, NA ^{[1
]}

Cook, JW ^{[1
]}

Schetzina, JF ^{[1
]}

Ren, J ^{[1
]}

Edmond, JA ^{[1
]}

机构：

[1] CREE RES INC, DURHAM, NC 27713 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 05期

关键词：

AlxGa1-xN; GaN; GaN/SiC substrates; molecular beam epitaxy; transmission electron microscopy;

D O I：

10.1007/BF02666638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of GaN and AlGaN by molecular beam epitaxy (MBE) has been studied using GaN/SiC substrates. The GaN/SiC substrates consisted of similar to 3 mu m thick GaN buffer layers grown on GH-SiC wafers by metalorganic vapor phase epitaxy (MOVPE) at Cree Research, Inc. The MBE-grown GaN films exhibit excellent structural and optical properties-comparable to the best GaN grown by MOVPE. AlxGa1-xN films (x similar to 0.06-0.08) and AlxGa1-xN/GaN multi-quantum-well structures which display good optical properties were also grown by MBE on GaN/SiC substrates.

引用

页码：793 / 797

页数：5

共 17 条

[1] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].