THERMAL-STABILITY OF GAN INVESTIGATED BY LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY

被引：55

作者：

LIN, ME ^{[1
]}

SVERDLOV, BN ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 26期

关键词：

D O I：

10.1063/1.110069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the thermal behavior of 1-mum-thick GaN films grown by plasma-enhanced molecular beam epitaxy. Samples were annealed at elevated temperatures in a nitrogen environment and were characterized by low-temperature photoluminescence (PL). After GaN samples were annealed at up to 700-degrees-C, the free-exciton transition PL line intensity improved. This PL line intensity degraded when annealing temperatures reached 900-degrees-C. After annealing at 900-degrees-C, GaN samples with inferior crystalline quality exhibited a line at 2.3 eV attributed to point defects and antisite defects.

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页码：3625 / 3627

页数：3

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