GROWTH AND CHARACTERIZATION OF GAN ON C-PLANE (0001) SAPPHIRE SUBSTRATES BY PLASMA-ENHANCED MOLECULAR-BEAM EPITAXY

被引:45
作者
LIN, ME [1 ]
SVERDLOV, BN [1 ]
MORKOC, H [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.354285
中图分类号
O59 [应用物理学];
学科分类号
摘要
GaN films were grown on the c-plane of sapphire substrates by plasma-enhanced molecular beam epitaxy equipped with an electron-cyclotron resonance (ECR) source. Sapphire substrates were cleaned by a hydrogen plasma treatment, obviating the need for perilous elevated temperatures. ECR sources are plagued with high energetic ions, particularly at high microwave power levels, where they cause damage in the growing films. To circumvent this problem, we systematically optimized the growth conditions and other pertinent parameters for optimum layer quality. Among the parameters optimized were the magnetic field strength, microwave power, nitrogen over-pressure, and growth temperature. The quality of the GaN layers were evaluated by electrical and structural measurements as well as observing the surface morphology.
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页码:5038 / 5041
页数:4
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