Multimode switching induced by a transverse field in planar magnetic nanowires

被引:17
作者
Bryan, MT [1 ]
Atkinson, D
Allwood, DA
机构
[1] Univ Sheffield, Dept Mat Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Durham, Dept Phys, Durham DH1 3LE, England
[3] Univ Sheffield, Dept Mat Engn, Sheffield S1 3JD, S Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1063/1.2162263
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report how transverse fields affect the axial field needed to '' inject '' domain walls from a large Permalloy (Ni80Fe20) pad into planar nanowires of width 184 nm, 303 nm, 321 nm, and 537 nm fabricated by electron beam lithography. For the narrowest wire, different switching fields are observed under the same transverse field conditions, indicating that more than one mode or state for the domain walls may exist. In contrast, in the widest wires a transverse field causes each reversal event to occur in two stages. The different response may be attributed to the magnetostatic energy differences of domain walls in wires of different widths. (c) 2006 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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