Improvements of the optical and electrical properties of GaN films by using in-doping method during growth

被引：30

作者：

Shen, XQ ^{[1
]}

Ramvall, P ^{[1
]}

Riblet, P ^{[1
]}

Aoyagi, Y ^{[1
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Semicond Res Lab, Wako, Saitama 3510198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 4B期

关键词：

In-doping; GaN film; X-ray diffraction; photoluminescence; electron mobility;

D O I：

10.1143/JJAP.38.L411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical and electrical properties of GaN films grown by using In-doping method during growth have been investigated. The GaN films were grown on alpha-Al2O3(0001) substrates by gas-source molecular beam epitaxy. X-ray diffraction measurements illustrate that the quality of GaN films were improved by In-doping. Photoluminescence measurements at 10 K show that the band-edge related emission of GaN was enhanced by more than one order of magnitude by this In-doping method, while the luminescence originating from D-A pair recombination and structural defects, or possibly oxygen, was reduced. Furthermore, Hall effect measurements at room temperature (300 K) gave a higher Hall mobility of In-doped samples than non-doped one. The technique of In-doping during GaN growth looks promising for improving the optical and electrical properties of optic and electronic devices.

引用

页码：L411 / L413

页数：3

共 22 条

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