Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs

被引：156

作者：

Oiwa, A ^{[1
]}

Katsumoto, S ^{[1
]}

Endo, A ^{[1
]}

Hirasawa, M ^{[1
]}

Iye, Y ^{[1
]}

Ohno, H ^{[1
]}

Matsukura, F ^{[1
]}

Shen, A ^{[1
]}

Sugawara, Y ^{[1
]}

机构：

[1] TOHOKU UNIV, ELECT COMMUN RES INST, SENDAI, MIYAGI 98077, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 103卷 / 04期

关键词：

semiconductors; magnetically ordered system; impurities in semiconductors; electronic transport;

D O I：

10.1016/S0038-1098(97)00178-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied magnetic and transport properties of a series of Ga1-xMnxAs/GaAs samples with different Mn concentrations (x = 0.015-0.071). For Mn content higher than about 0.02, carrier(hole)-induced ferromagnetism is observed. Samples with x = 0.035 and 0.043 behave as ferromagnetic dirty metals. With further increase of Mn content above x similar to 0.05, the zero-field resistivity turns a semiconducting temperature dependence. Very large negative magnetoresistance is observed in nonmetallic samples near the metal-nonmetal transitions both in the low and the high Mn content regimes. (C) 1997 Elsevier Science Ltd.

引用

页码：209 / 213

页数：5

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