Multi-dimensional Raman spectroscopy: From the UV to the near-IR

被引:1
作者
Barnett, SM [1 ]
Bormett, RW [1 ]
Whitley, A [1 ]
机构
[1] Renishaw Inc, Schaumburg, IL 60173 USA
来源
THREE-DIMENSIONAL AND MULTIDIMENSIONAL MICROSCOPY: IMAGE ACQUISITION AND PROCESSING VI, PROCEEDINGS OF | 1999年 / 3605卷
关键词
D O I
10.1117/12.347577
中图分类号
TH742 [显微镜];
学科分类号
摘要
The structural elucidation of complex systems may be simplified with multi-dimensional spectroscopic techniques with some combination of spatial and spectral resolution. Raman spectroscopy permits the addition of another variable to this scenario -excitation wavelength. Data obtained using excitation wavelengths from the UV (244 nm) to near-IR (785 nm) regions will be presented showing the qualitative and quantitative study of diamond-like carbon (DLC), silicon, and other systems of an industrial or biomedical nature. The choice of appropriate wavelength provides an additional advantage over other spectroscopic techniques for elucidating specific structural information from these systems. The advantages of UV-Raman for materials science and thin film studies will be considered. The design of instruments and probes for the application of Raman spectroscopy to industrial process control and the development of Raman spectroscopic libraries for contaminant analysis will be discussed.
引用
收藏
页码:308 / 316
页数:9
相关论文
共 9 条
[1]  
BOND JS, 1998, 216 ACS NAT M BOST A
[2]  
Freeman TL, 1997, J RAMAN SPECTROSC, V28, P641, DOI 10.1002/(SICI)1097-4555(199708)28:8<641::AID-JRS197>3.0.CO
[3]  
2-T
[4]   Direct observation of sp(3) bonding in tetrahedral amorphous carbon using ultraviolet Raman spectroscopy [J].
Gilkes, KWR ;
Sands, HS ;
Batchelder, DN ;
Robertson, J ;
Milne, WI .
APPLIED PHYSICS LETTERS, 1997, 70 (15) :1980-1982
[5]   Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate [J].
Magidson, V ;
Regelman, DV ;
Beserman, R ;
Dettmer, K .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1044-1046
[6]  
Otto C, 1997, J RAMAN SPECTROSC, V28, P143, DOI 10.1002/(SICI)1097-4555(199702)28:2/3<143::AID-JRS70>3.0.CO
[7]  
2-9
[8]   Raman imaging of patterned silicon using a solid immersion lens [J].
Poweleit, CD ;
Gunther, A ;
Goodnick, S ;
Menendez, J .
APPLIED PHYSICS LETTERS, 1998, 73 (16) :2275-2277
[9]   Systematic variation of the Raman spectra of DLC films as a function of sp(2):sp(3) composition [J].
Prawer, S ;
Nugent, KW ;
Lifshitz, Y ;
Lempert, GD ;
Grossman, E ;
Kulik, J ;
Avigal, I ;
Kalish, R .
DIAMOND AND RELATED MATERIALS, 1996, 5 (3-5) :433-438