Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate

被引：32

作者：

Magidson, V ^{[1
]}

Regelman, DV

Beserman, R

Dettmer, K

机构：

[1] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel

[3] Tech Univ, Inst Semicond Phys & Opt, Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nominal Ge islands were grown by a molecular beam epitaxy technique on a Si(001) substrate. Island positions and shapes were measured by atomic force microscopy. Two types of islands with different sizes and shapes are present. The Si concentration distribution inside the islands was measured by Raman imaging technique with a 0.4 mu m resolution, and was found to vary between 10% and 30% in large islands and be 10% in smaller islands. (C) 1998 American Institute of Physics. [S0003-6951(98)04734-2].

引用

页码：1044 / 1046

页数：3

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