Phonons as probes in self-organized SiGe islands

被引：108

作者：

Groenen, J

Carles, R

Christiansen, S

Albrecht, M

Dorsch, W

Strunk, HP

Wawra, H

Wagner, G

机构：

[1] Univ Toulouse 3, Phys Solides Lab, F-31062 Toulouse, France

[2] Univ Erlangen Nurnberg, Inst Werkstoffwissensch Mikrocharakterisierung, D-91058 Erlangen, Germany

[3] Inst Kristallzuchtung Berlin, D-12483 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show how optical phonons can be used as efficient probes in self-organized Si1-xGex islands grown on Si(001). Both the alloy composition and residual strain in the islands were originally determined from the phonon frequencies and Raman intensities. The experimental results are in good agreement with the strain relaxation simulated by means of the finite element method. (C) 1997 American Institute of Physics. [S0003-6951(97)02651-1].

引用

页码：3856 / 3858

页数：3

共 16 条

[1] RAMAN-SPECTRA OF C-SI1-XGEX ALLOYS [J].