Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy

被引：60

作者：

Groenen, J

Mlayah, A

Carles, R

Ponchet, A

LeCorre, A

Salaun, S

机构：

[1] CNRS,CTR ELABORAT & ETUDES STRUCT,F-31055 TOULOUSE,FRANCE

[2] FRANCE TELECOM,CNET,LAB,RIO,PCO,F-22307 LANNION,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.116951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman scattering has been used to investigate strained InAs islands grown on InP(001), in correlation with transmission electron microscopy. Symmetry arguments, selective resonance at the InAs E(1)-like transition and comparison with a single-quantum-well structure allowed to distinguish between the islands and remaining wetting layer signals. Whereas the vibrational modes of the 2D thin layers are greatly affected by interface roughness and confinement, strain effects mainly account for the phonon frequency shifts in the islands. (C) 1996 American Institute of Physics.

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页码：943 / 945

页数：3

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