Ferroelectric properties of BiFeO3 films grown by sol-gel process

被引：54

作者：

Liu, HR

Liu, ZL ^{[1
]}

Liu, Q

Yao, KL

机构：

[1] Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China

[2] Hubei Normal Univ, Dept Phys, Huangshi 435002, Peoples R China

来源：

THIN SOLID FILMS | 2006年 / 500卷 / 1-2期

关键词：

sol-gel; BiFeO3; films; ferroelectric properties; dielectric properties; magnetic properties and measurements;

D O I：

10.1016/j.tsf.2005.11.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several methods have been used to prepare ferroelectromagnetic BiFeO3 films. In this paper, we adopted a sol-gel process to fabricate BiFeO3 films on indium tin oxide (ITO)/glass substrates. X-ray diffraction pattern indicated that the samples are randomly oriented. Cross section scanning microscopy showed that the thicknesses of both films were about 1.2 mu m and no apparent diffusion between the BiFeO3 films and ITO/glass substrates. Remnant polarization of 2,0 and 1.75 mu C/cm(2) were identified by the measuring of electric hysteresis loops for the films annealed at 500 and 600 degrees C respectively at an applied field of 108 kV/cm. Dielectric property and loss factor were investigated as a function of frequency. In addition, magnetism was detected at 77 K. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：105 / 109

页数：5

共 28 条

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