High voltage (450 V) 6H-SIC lateral MESFET structure

被引：5

作者：

Alok, D

Baliga, BJ

机构：

[1] Power Semiconductor Research Center, North Carolina State University, Raleigh

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 20期

关键词：

MESFET; silicon carbide;

D O I：

10.1049/el:19961287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high voltage 6H-SiC lateral MESFET has been fabricated using a three mask process. Selective ion implantation was used to create the conducting layer (N-region) demonstrating the RESURF effect in SiC for first time, as well as easy isolation and edge termination. This MESFET was able to withstand a forward blocking voltage of 450 V at a gate voltage of -20 V. The specific on-resistance and transconductance for a device with a drain gate separation of 15 mu m was found to be 83 m Omega cm(2) and 2mS/mm respectively.

引用

页码：1929 / 1931

页数：3

共 9 条

[1]

ALOK D, 1993, IEDM, P691

[2]

[Anonymous], 1979, IEDM

[3] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].