Electronic states in magnetic nanostructures

被引:24
作者
Himpsel, FJ
Altmann, KN
Mankey, GJ
Ortega, JE
Petrovykh, DY
机构
[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[2] Univ Alabama, MINT Ctr, Tuscaloosa, AL 35487 USA
[3] Univ Basque Country, Dept Fis Mat, San Sebastian, Spain
[4] Univ Basque Country, Dept Fis Aplicada 1, San Sebastian, Spain
关键词
photoemission; transition metal; fermi surface; quantum well; spin;
D O I
10.1016/S0304-8853(99)00349-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic states responsible for oscillatory magnetic coupling, giant magnetoresistance (GMR), and spin-polarized tunneling are explored. They occupy well-defined locations in (E,k) space. Their energy E has to be within a few kT of the Fermi level, a range that is now becoming accessible to high-resolution photoemission. Particular attention is paid to k-regions near the Fermi level crossings of the s, p-band where a sizable group velocity is combined with a d-like magnetic splitting and spin-polarization. These electronic states can be tailored by quantization in structures with single-digit nanometer dimensions, such as two-dimensional quantum wells and one-dimensional arrays of stripes and dots. Such arrays can be produced by self-assembly on top of stepped silicon surfaces, (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:456 / 469
页数:14
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