Mechanical, tribological, and stress analyses of ion-beam-deposited boron-rich boron nitride films with increasing N content

被引:3
作者
Chan, KF
Ong, CW [1 ]
Choy, CL
Kwok, RWM
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Peoples R China
[3] Chinese Univ Hong Kong, Dept Chem, Hong Kong, Peoples R China
关键词
D O I
10.1557/JMR.1999.0536
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Boron (B) films and B-rich BNx films with different N contents (4.1-40.3 at.%.) were deposited by dual ion-beam deposition. The films consist of a B-rich phase constructed of icosahedral atomic clusters and a graphitelike boron nitride phase. The films with N content less than or equal to 20.3 at.% is dominated by the B-rich phase. Their hardness rises with increasing N content to reach a maximum value of 18.8 GPa. The hardness-to-elastic modulus ratio (H/E) and the critical load of the films also increase, showing stronger wear resistance of the films. These results can be explained if some N-B-N chains are formed at the interstitial sites in the network of the B-rich phase, which cross-link different icosahedral atomic clusters in the B-rich phase and strengthen the rigidity of the structure. For the films with higher N contents, the volume fraction of the graphitelike boron nitride phase becomes higher, and the hardness drops as a consequence. However, the change in the H/E ratio is rather mild. This implies that the wear resistance of the films is not altered and explains why the critical load of the films remains almost unchanged. In addition, the friction coefficient mu of all the films depends on the normal load L in the form of mu = aL(y), where a and y are numerical parameters and an insensitive to the change in the N content. Furthermore, compressive stress was found to increase from about 0.12 to 1.7 GPa when the N content increased from 4.1 to 40.3 at.%.
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页码:3962 / 3972
页数:11
相关论文
共 24 条
[1]   LATTICE-CONSTANTS OF BORON CARBIDES [J].
ASELAGE, TL ;
TISSOT, RG .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (08) :2207-2212
[2]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[3]   Hard boron suboxide-based films deposited in a sputter-sourced, high-density plasma deposition system [J].
Doughty, C ;
Gorbatkin, SM ;
Tsui, TY ;
Pharr, GM ;
Medlin, DL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (05) :2623-2626
[4]   GROWTH-MECHANISM OF CUBIC BORON-NITRIDE IN A RF GLOW-DISCHARGE [J].
DWORSCHAK, W ;
JUNG, K ;
EHRHARDT, H .
THIN SOLID FILMS, 1995, 254 (1-2) :65-74
[5]   PULSED-LASER DEPOSITION OF BN ONTO SILICON (100) SUBSTRATES AT 600-DEGREES-C [J].
FRIEDMANN, TA ;
MCCARTY, KF ;
KLAUS, EJ ;
BARBOUR, JC ;
CLIFT, WM ;
JOHNSEN, HA ;
MEDLIN, DL ;
MILLS, MJ ;
OTTESEN, DK .
THIN SOLID FILMS, 1994, 237 (1-2) :48-56
[6]  
GOLIKOVA OA, 1969, FIZ TVERD TELA+, V11, P1341
[7]   SEMICONDUCTORS WITH COMPLEX LATTICE AND THE AMORPHIZATION PROBLEM [J].
GOLIKOVA, OA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 101 (02) :277-314
[8]   High-pressure, high-temperature synthesis and characterization of boron suboxide (B6O) [J].
Hubert, H ;
Garvie, LAJ ;
Devouard, B ;
Buseck, PR ;
Petuskey, WT ;
McMillan, PF .
CHEMISTRY OF MATERIALS, 1998, 10 (06) :1530-1537
[9]   Superhard boron-rich borides and studies of the B-C-N system [J].
Lundstrom, T ;
Andreev, YG .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1996, 209 (1-2) :16-22
[10]   ON THE ROLE OF IONS IN THE FORMATION OF CUBIC BORON-NITRIDE FILMS BY ION-ASSISTED DEPOSITION [J].
MIRKARIMI, PB ;
MCCARTY, KF ;
MEDLIN, DL ;
WOLFER, WG ;
FRIEDMANN, TA ;
KLAUS, EJ ;
CARDINALE, GF ;
HOWITT, DG .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (11) :2925-2938