SiC-bulk growth by physical-vapor transport and its global modelling

被引：64

作者：

Hofmann, D

Eckstein, R

Kolbl, M

Makarov, Y

Muller, SG

Schmitt, E

Winnacker, A

Rupp, R

Stein, R

Volkl, J

机构：

[1] LEHRSTUHL STROMUNGSMECH,D-91058 ERLANGEN,GERMANY

[2] SIEMENS AG,CORP RES & DEV,ZT EN 6,D-91050 ERLANGEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

SiC bulk vapor growth; CVD of SiC epitaxial layers; micropipe formation; physical vapor transport; numerical modelling of SiC sublimation growth;

D O I：

10.1016/S0022-0248(97)00037-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

4H- and GH-SIC bulk crystals have been prepared by physical vapor transport (PVT) both in resistively and inductively heated growth reactors. Epitaxial SiC layers were grown on the wafers by chemical vapor deposition. Structural and electrical material properties of the 1-1.4 inch boules and epitaxial layers were investigated by defect etching and optical microscopy, stress birefringence and Hall effect. Single crystalline material exhibits a low micropipe density MPD approximate to 70 cm(-2) and stress level. Blocking characteristics of the epitaxial layers have been determined electrically revealing high breakdown fields of 1.8-1.9 MV/cm. Finally simulation results applying a process model of SiC PVT crystallization including heat and mass transfer and chemical reactions are presented.

引用

页码：669 / 674

页数：6

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