FIRST RESULTS ON SILICON-CARBIDE VAPOR-PHASE EPITAXY GROWTH IN A NEW-TYPE OF VERTICAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR

In this paper a new concept for silicon carbide vapour phase epitaxy (VPE) will be presented. It is based on the rotating disk technology well known in the field of III-V epitaxy. First results will be given showing excellent structural quality of the epitaxial layers together with high growth rates up to 5 mu m/h and good uniformity of layer thickness over 1 inch wafers. The C/Si-ratio in the process can be varied over a wide range (0.35-2.3 at 3 mu m/h) without loss of surface quality. This enables a precise control of the site competition effect and,therefore, of the incorporation of acceptor and donor impurities. Thus, non-intentionally doped p- (C/Si > 1) and n-type, (C/Si < 0.7) epilayers with carrier concentrations considerably below 10(16) cm(-3) can be grown.