CVD GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTALLINE 6H-SILICON CARBIDE

被引：22

作者：

KARMANN, S ^{[1
]}

HABERSTROH, C ^{[1
]}

ENGELBRECHT, F ^{[1
]}

SUTTROP, W ^{[1
]}

SCHONER, A ^{[1
]}

SCHADT, M ^{[1
]}

HELBIG, R ^{[1
]}

PENSL, G ^{[1
]}

STEIN, RA ^{[1
]}

LEIBENZEDER, S ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8520 ERLANGEN,GERMANY

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90216-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Homoepitaxial growth of 6H-SiC layers is performed at 1600-degrees-C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural, optical and electrical characterization techniques. Unintentionally doped layers show donor concentrations of (N(D) - N(A)) almost-equal-to 3 x 10(15) cm-3. An electron mobility of 370 cm2/V s at room temperature and of almost 11 000 cm2/V s is observed at T = 45 K.

引用

页码：75 / 78

页数：4

共 12 条

[1]

HABERSTROH C, 1992, THESIS U ERLANGEN

[2] GROWTH CHARACTERISTICS OF ALPHA-SILICON CARBIDE .1. CHEMICAL VAPOR DEPOSITION [J].