EPITAXIAL-GROWTH OF A-SIC FROM VAPOR-PHASE

被引：25

作者：

MINAGWA, S

GATOS, HC

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 12期

关键词：

D O I：

10.1143/JJAP.10.1680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1680 / +

页数：1

共 16 条

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ADDAMIANO, A ;

POTTER, RM ;

OZAROW, V .

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[2]

BARTLETT RW, 1968, SILICON CARBIDE, P341

[3] EPITAXIAL GROWTH OF SILICON CARBIDE BY THERMAL REDUCTION TECHNIQUE [J].

CAMPBELL, RB ;

CHU, TL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :825-&

[4] CHEMICAL ETCHING OF SILICON CARBIDE WITH HYDROGEN [J].

CHU, TL ;

CAMPBELL, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :955-&

[5] GROWTH CHARACTERISTICS OF ALPHA-SILICON CARBIDE .1. CHEMICAL VAPOR DEPOSITION [J].

HARRIS, JM ;

GATOS, HC ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :335-&

[6] IDENTIFICATION OF (0001) AND (0001) SURFACES OF SILICON CARBIDE [J].

HARRIS, JM ;

GATOS, HC ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) :672-&

[7] ETCHING CHARACTERISTICS OF SILICON CARBIDE IN HYDROGEN [J].

HARRIS, JM ;

GATOS, HC ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) :380-&

[8]

INOMATA Y, 1971, J CERAM SOC JPN, V79, P30

[9] EPITAXIAL GROWTH OF SILICON CARBIDE [J].

JENNINGS, VJ ;

SOMMER, A ;

CHANG, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :728-&

[10]

JENNINGS VJ, 1968, SILICON CARBIDE 1968, P199

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