GROWTH CHARACTERISTICS OF ALPHA-SILICON CARBIDE .1. CHEMICAL VAPOR DEPOSITION

被引：26

作者：

HARRIS, JM

GATOS, HC

WITT, AF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 02期

关键词：

D O I：

10.1149/1.2408041

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：335 / &

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[7] IDENTIFICATION OF (0001) AND (0001) SURFACES OF SILICON CARBIDE
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[8] ETCHING CHARACTERISTICS OF SILICON CARBIDE IN HYDROGEN
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) : 380 - &
[9] GROWTH CHARACTERISTICS OF ALPHA-SILICON CARBIDE .2. EQUILIBRIUM CONSIDERATIONS
HARRIS, JM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 338 - &
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