MORPHOLOGY AND GROWTH-RATE OF BETA-SIC GROWN ON (100) SILICON BY CHEMICAL VAPOR-DEPOSITION

被引：18

作者：

NORDQUIST, PER

KELNER, G

GIPE, ML

KLEIN, PH

机构：

来源：

MATERIALS LETTERS | 1989年 / 8卷 / 6-7期

关键词：

D O I：

10.1016/0167-577X(89)90105-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：209 / 211

页数：3

相关论文

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