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Semiconductor amplifiers and lasers with tapered gain regions

被引：219
作者：
Walpole, JN
机构：
[1] Massachusetts Institute of Technology, Lincoln Laboratory, Lexington
来源：
OPTICAL AND QUANTUM ELECTRONICS | 1996年 / 28卷 / 06期
关键词：
D O I：
10.1007/BF00411298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconductor amplifiers and lasers with tapered gain regions provide the highest-brightness all-semiconductor sources of near infrared continuous wave (CW) power and have many useful applications. Simple models of these devices are described. Their applications, device performance and brightness limitations are reviewed.
引用
收藏
页码：623 / 645
页数：23
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