Growth of Si-doped InAs quantum dots and annealing effects on size distribution

We investigated the Si-doped InAs quantum dots (QDs) grown by molecular beam epitaxy and the annealing effects on the QD size distribution through photoluminescence (PL) spectroscopy. A double-peak feature in PL was observed from as-grown InAs QDs with Si-doping, and excitation intensity dependence of PL indicated that the double-peak feature is related to the ground-state emission from In-As QDs with bimodal size distribution. The PL spectrum from Si-doped InAs QDs subjected to annealing treatment at 800 degreesC in nitrogen ambient showed three additional PL peaks and blue-shift of the do-able-peak feature observed from as-grown sample. The excitation-intensity-dependent PL and consideration of thermal stability of carriers through temperature-dependent PL measurement demonstrated that three additional peaks come from the InAs QDs with three new branches of QD occurring during annealing process. (C) 2002 Elsevier Science B.V. All rights reserved.