Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer

被引:41
作者
Kim, JS
Yu, PW
Leem, JY [1 ]
Lee, JI
Noh, SK
Kim, JS
Kim, SM
Son, JS
Lee, UH
Yim, JS
Lee, D
机构
[1] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305340, South Korea
[2] Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea
[3] Kyungwoon Univ, Sch Architecture Environm & Life Sci, Kumi 730850, South Korea
[4] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
关键词
D O I
10.1063/1.1373410
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ground-state energy of InAs quantum dots (QDs) in the GaAs matrix can be changed significantly by introducing a thin AlAs layer (1 nm). The photoluminescence (PL) peak position of the QDs grown directly on the thin AlAs layer is blueshifted by 171 meV from that of the QDs grown without the AlAs layer. QDs grown on an additional GaAs thin layer on top of the AlAs layer have PL peaks systematically redshifted to lower energy as the GaAs layer becomes thicker. Time-resolved PL shows that the QDs have similar lifetimes, attesting to the fact that all the QDs grown in this way are of high quality, although the energy level change is large and a thin AlAs layer is introduced. (C) 2001 American Institute of Physics.
引用
收藏
页码:3247 / 3249
页数:3
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