Cavity QED effects in semiconductor microcavities

被引：64

作者：

Eleuch, H ^{[1
]}

Courty, JM ^{[1
]}

Messin, G ^{[1
]}

Fabre, C ^{[1
]}

Giacobino, E ^{[1
]}

机构：

[1] Univ Paris 06, Lab Kastler Brossel, Ecole Normale Super, CNRS, F-75252 Paris 05, France

来源：

JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS | 1999年 / 1卷 / 01期

关键词：

quantum noise; squeezing; antibunching; microcavities; semiconductor quantum wells; excitons;

D O I：

10.1088/1464-4266/1/1/001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A theoretical investigation of cavity QED effects in semiconductor microcavities containing quantum wells is presented. A model Hamiltonian is used to derive equations of motion for the quantum photon and exciton fields in the cavity. Quantum effects such as squeezing and antibunching are predicted in the light field going out of the cavity under irradiation by a coherent laser field, if exciton-phonon scattering is weak enough. Exciton-phonon scattering is shown to destroy the nonclassical effects and to yield excess noise in the output field.

引用

页码：1 / 7

页数：7

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