Vertical high-mobility wrap-gated InAs nanowire transistor

被引：291

作者：

Bryllert, T ^{[1
]}

Wernersson, LE

Fröberg, LE

Samuelson, L

机构：

[1] Lund Univ, Dept Solid State Phys, Nanometer Struct Consortium, SE-22100 Lund, Sweden

[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[3] QuNano AB, SE-22224 Lund, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 05期

关键词：

field-effect transistor (FET); InAs; nanowires; wrap gate;

D O I：

10.1109/LED.2006.873371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.

引用

页码：323 / 325

页数：3

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