Vertical-mode dependence of coupling between an electron waveguide and reservoirs with two occupied subbands

被引：9

作者：

Apetrii, G ^{[1
]}

Fischer, SF

Ulrich, KA

Schuh, D

Abstreiter, G

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Werkstoffe & Nanoelekt, D-44780 Bochum, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Munich, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 22卷 / 1-3期

关键词：

quantum point contact; transport modes; 1D-2D coupling; GaAs/AlGaAs;

D O I：

10.1016/j.physe.2003.12.030

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Quantum point contacts (QPCs) have been fabricated by atomic force microscope lithography from a GaAs/AlGaAs heterostructure containing a two-dimensional (21)) electron gas with two subbands occupied. The QPC energy spectrum is characterized by two quantum numbers, for the vertical (s) and lateral (n) confinement. The one-dimensional modes were identified by using persistent recharging of the heterostructure supply layer while cooling the QPCs from room temperature to 4.2 K under a forward gate bias voltage. A stronger smearing of the conductance steps originating from the second vertical mode (s = 2) compared to those of the ground mode (s = 1) is observed, which we explain by an enhanced scattering at the coupling of the second vertical mode to the 21) reservoirs. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：398 / 401

页数：4

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