Control of the confining potential in ballistic constrictions using a persistent charging effect

被引：17

作者：

Fischer, SF ^{[1
]}

Apetrii, G ^{[1
]}

Skaberna, S ^{[1
]}

Kunze, U ^{[1
]}

Reuter, D ^{[1
]}

Wieck, AD ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

关键词：

D O I：

10.1063/1.1511278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs/AlGaAs quantum point contacts are fabricated by atomic force microscope lithography and wet chemical etching. The lateral confinement potential of a given ballistic constriction is varied by persistent fractional charging of the donors in the supply layer. A forward bias voltage applied to the gate electrode during sample cooling shifts the conductance threshold at T=4.2 K towards higher gate voltage due to partial neutralization of the donors. Simultaneously, the width of the quantized conductance plateaus at multiples of 2e(2)/h decreases. Measurements under finite drain voltage reveal a reduction of the lowest subband separation from DeltaE(1,2)=17.5+/-1 to 13+/-1 meV as the cooling bias voltage is raised from 0 to +0.6 V. (C) 2002 American Institute of Physics.

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页码：2779 / 2781

页数：3

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共 13 条

[1] Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope [J].

Apetrii, G ;

Fischer, SF ;

Kunze, U ;

Reuter, D ;

Wieck, AD .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (07) :735-739

[2] BACK-GATED SPLIT-GATE TRANSISTOR - A ONE-DIMENSIONAL BALLISTIC CHANNEL WITH VARIABLE FERMI ENERGY [J].

HAMILTON, AR ;

FROST, JEF ;

SMITH, CG ;

KELLY, MJ ;

LINFIELD, EH ;

FORD, CJB ;

RITCHIE, DA ;

JONES, GAC ;

PEPPER, M ;

HASKO, DG ;

AHMED, H .

APPLIED PHYSICS LETTERS, 1992, 60 (22) :2782-2784

[3] Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures [J].

Harrell, RH ;

Pyshkin, KS ;

Simmons, MY ;

Ritchie, DA ;

Ford, CJB ;

Jones, GAC ;

Pepper, M .

APPLIED PHYSICS LETTERS, 1999, 74 (16) :2328-2330

[4] Quantized conductance in quantum wires with gate-controlled width and electron density [J].

Kane, BE ;

Facer, GR ;

Dzurak, AS ;

Lumpkin, NE ;

Clark, RG ;

Pfeiffer, LN ;

West, KW .

APPLIED PHYSICS LETTERS, 1998, 72 (26) :3506-3508

[5] Nanolithography with an atomic force microscope by means of vector-scan controlled dynamic plowing [J].

Klehn, B ;

Kunze, U .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) :3897-3903

[6] Wet-chemical nanoscale patterning of GaAs surfaces using atomic force microscope lithography [J].

Klehn, B ;

Skaberna, S ;

Kunze, U .

SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) :473-476

[7] Bias and temperature dependence of the 0.7 conductance anomaly in quantum point contacts [J].

Kristensen, A ;

Bruus, H ;

Hansen, AE ;

Jensen, JB ;

Lindelof, PE ;

Marckmann, CJ ;

Nygard, J ;

Sorensen, CB ;

Beuscher, F ;

Forchel, A ;

Michel, M .

PHYSICAL REVIEW B, 2000, 62 (16) :10950-10957

[8] One-dimensional electron transport in devices fabricated by MBE regrowth over a patterned δ-doped backgate [J].

Leadbeater, ML ;

Burke, TM ;

Smith, MP ;

Linfield, EH ;

Ritchie, DA ;

Pepper, M .

PHYSICA E, 2000, 6 (1-4) :526-529

[9] EVOLUTION OF HALF PLATEAUS AS A FUNCTION OF ELECTRIC-FIELD IN A BALLISTIC QUASI-ONE-DIMENSIONAL CONSTRICTION [J].

PATEL, NK ;

NICHOLLS, JT ;

MARTINMORENO, L ;

PEPPER, M ;

FROST, JEF ;

RITCHIE, DA ;

JONES, GAC .

PHYSICAL REVIEW B, 1991, 44 (24) :13549-13555

[10] Spin splitting of one-dimensional subbands in high quality quantum wires at zero magnetic field [J].

Pyshkin, KS ;

Ford, CJB ;

Harrell, RH ;

Pepper, M ;

Linfield, EH ;

Ritchie, DA .

PHYSICAL REVIEW B, 2000, 62 (23) :15842-15850