One-dimensional electron transport in devices fabricated by MBE regrowth over a patterned δ-doped backgate

被引：1

作者：

Leadbeater, ML

Burke, TM

Smith, MP

Linfield, EH

Ritchie, DA

Pepper, M

机构：

[1] Cambridge Res Lab, Toshiba Res Europe Ltd, Cambridge CB4 0WE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICA E | 2000年 / 6卷 / 1-4期

关键词：

quantized ballistic conductance; one-dimensional constriction;

D O I：

10.1016/S1386-9477(99)00100-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

MBE regrowth and hydrogen radical decontamination of an ex situ patterned GaAs wafer have been successfully used to create a one-dimensional constriction which exhibits quantised ballistic conductance. Deviations from exact quantisation are discussed in terms of electron reflection at the entrance to the constriction. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

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页码：526 / 529

页数：4

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